Silicon Nitride Ceramic Substrate

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Silicon Nitride Ceramic Substrate

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Silicon nitride ceramic substrate is a high-performance ceramic substrate material that shows promise for a wide range of applications in many fields due to its excellent thermal conductivity and mechanical strength. Silicon nitride ceramic substrates, the main component of which is silicon nitride (Si3N4), have high thermal conductivity (above 80 W/m-K) and excellent mechanical properties, such as high bending strength and high fracture toughness, ensuring a high degree of reliability.

In addition, the coefficient of thermal expansion of the silicon nitride ceramic substrate is highly similar to that of the silicon carbide (SiC) crystal substrate, ensuring a stable match between the two and further enhancing overall reliability.

Silicon nitride ceramic substrates excel in third-generation semiconductor devices, especially in complex environments such as new energy vehicles and modern transportation rails, where their high thermal conductivity and mechanical strength make them ideal. Silicon nitride ceramic substrates are used in a wide range of applications, including power modules, heat sinks, LEDs, and wireless modules.

Currently, advanced activated metal bonding (AMB) technology is used internationally for copper cladding, which offers higher bond strength and excellent hot and cold cycling characteristics.

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